2003-05-09 page 1 spp100n08s2-07 spb100n08s2-07 opti mos = == = power-transistor product summary v ds 75 v r ds(on) max. smd version 6.8 m i d 100 a feature n-channel enhancement mode 175c operating temperature avalanche rated d v /d t rated p- to263 -3-2 p- to220 -3-1 marking pn0807 pn0807 type package ordering code spp100n08s2-07 p- to220 -3-1 q67060-s6044 spb100n08s2-07 p- to263 -3-2 q67060-s6046 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current 1) t c =25c i d 100 100 a pulsed drain current t c =25c i d puls 400 avalanche energy, single pulse i d =80 , v dd =25v, r gs =25 e as 810 mj repetitive avalanche energy, limited by t j max 2) e ar 30 reverse diode d v /d t i s =100a, v ds =60v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 300 w operating and storage temperature t j , t st g -55... +175 c iec climatic category; din iec 68-1 55/175/56
2003-05-09 page 2 spp100n08s2-07 spb100n08s2-07 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - 0.3 0.5 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 75 - - v gate threshold voltage, v gs = v ds i d =250a v gs(th) 2.1 3 4 zero gate voltage drain current v ds =75v, v gs =0v, t j =25c v ds =75v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =10v, i d =66a v gs =10v, i d =66a, smd version r ds(on) - - 5.6 5.3 7.1 6.8 m 1 current limited by bondwire ; with an r thjc = 0.5k/w the chip is able to carry i d = 133a at 25c, for detailed information see app.-note anps071e available at www.infineon.com/optimos 2 defined by design. not subject to production test. 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2003-05-09 page 3 spp100n08s2-07 spb100n08s2-07 electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =100a 56 112 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 4530 6020 pf output capacitance c oss - 1080 1440 reverse transfer capacitance c rss - 450 680 turn-on delay time t d(on) v dd =40v, v gs =10v, i d =100a, r g =2.2 - 25 38 ns rise time t r - 36 54 turn-off delay time t d(off) - 68 100 fall time t f - 36 55 gate charge characteristics gate to source charge q gs v dd =60v, i d =100a - 25 33 nc gate to drain charge q gd - 82 120 gate charge total q g v dd =60v, i d =100a, v gs =0 to 10v - 153 200 gate plateau voltage v (plateau) v dd =60v, i d =100a - 5.5 - v reverse diode inverse diode continuous forward current i s t c =25c - - 100 a inv. diode direct current, pulsed i sm - - 400 inverse diode forward voltage v sd v gs =0v, i f =80a - 0.9 1.3 v reverse recovery time t rr v r =40v, i f = l s , d i f /d t =100a/s - 90 110 ns reverse recovery charge q rr - 290 360 nc
2003-05-09 page 4 spp100n08s2-07 spb100n08s2-07 1 power dissipation p tot = f ( t c ) parameter: v gs 6 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 40 80 120 160 200 240 w 320 spp100n08s2-07 p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 a 110 spp100n08s2-07 i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp100n08s2-07 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a spp100n08s2-07 i d r d s ( o n ) = v d s / i d 1 ms 100 s t p = 15.0 s
2003-05-09 page 5 spp100n08s2-07 spb100n08s2-07 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 1 2 3 4 v 6 v ds 0 20 40 60 80 100 120 140 160 180 200 a 240 spp100n08s2-07 i d v gs [v] a a 4.8 b b 5.0 c c 5.3 d d 5.5 e e 5.8 f f 6.0 g g 6.3 h h 6.5 i p tot = 300 w i 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 20 40 60 80 100 120 a 160 i d 0 2 4 6 8 10 12 14 16 18 20 24 spp100n08s2-07 r ds(on) v gs [v] = e e 5.8 f f 6.0 g g 6.3 h h 6.5 i i 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 1 2 3 4 5 v 7 v gs 0 20 40 60 80 100 120 140 160 180 a 220 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 100 a 140 i d 0 10 20 30 40 50 60 70 80 90 100 s 120 g fs
2003-05-09 page 6 spp100n08s2-07 spb100n08s2-07 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 66 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 2 4 6 8 10 12 14 16 18 20 22 24 28 spp100n08s2-07 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 2 2.5 3 v 4 v gs(th) 270 a 1.35 ma 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 5 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spp100n08s2-07 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2003-05-09 page 7 spp100n08s2-07 spb100n08s2-07 13 typ. avalanche energy e as = f ( t j ) par.: i d = 80 , v dd = 25 v, r gs = 25 25 45 65 85 105 125 145 c 185 t j 0 100 200 300 400 500 600 700 mj 850 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 100 a pulsed 0 20 40 60 80 100 120 140 160 180 nc 210 q gate 0 2 4 6 8 10 12 v 16 spp100n08s2-07 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 68 70 72 74 76 78 80 82 84 86 88 v 92 spp100n08s2-07 v (br)dss
2003-05-09 page 8 spp100n08s2-07 spb100n08s2-07 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. further information please notice that the part number is b spp100n08s2-07 and b spb100n08s2-07, for simplicity the device is referred to by the term spp100n08s2-07 and spb100n08s2-07 throughout this documentation.
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